Datasheet Details
| Part number | FDD18N20LZ |
|---|---|
| Manufacturer | onsemi |
| File Size | 251.85 KB |
| Description | 200V 16A N-Channel MOSFET |
| Datasheet |
 FDD18N20LZ Datasheet
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Description
on planar stripe and DMOS technology.
state resistance, and to provide better switching performance and higher avalanche energy strength.
Features
- RDS(on) = 125 mW (Typ. ) @ VGS = 10 V, ID = 8 A.
- Low Gate Charge (Typ. 30 nC).
- Low CRSS (Typ. 25 pF).
- 100% Avalanche Tested.
- Improved dv/dt Capability.
- ESD Improved Capability.
- These Device is Pb.
- Free and is RoHS Compliant.