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FDD18N20LZ - 200V 16A N-Channel MOSFET

Datasheet Summary

Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 125 mW (Typ. ) @ VGS = 10 V, ID = 8 A.
  • Low Gate Charge (Typ. 30 nC).
  • Low CRSS (Typ. 25 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Improved Capability.
  • These Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FDD18N20LZ
Manufacturer ON Semiconductor
File Size 251.85 KB
Description 200V 16A N-Channel MOSFET
Datasheet download datasheet FDD18N20LZ Datasheet
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MOSFET - N-Channel, UniFETt 200 V, 16 A, 125 mW FDD18N20LZ Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features  RDS(on) = 125 mW (Typ.) @ VGS = 10 V, ID = 8 A  Low Gate Charge (Typ. 30 nC)  Low CRSS (Typ.
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